We present an error-tolerant SRAM design optimized for ultra-low standby power. Using SRAM cell optimization techniques, the maximum data retention voltage (DRV) of a 90nm 26kb SR...
—It is generally acknowledged that nanoelectronics will eventually replace traditional silicon CMOS in high-performance integrated circuits. To that end, considerable investments...
This paper presents a new multiprocessor platform for high throughput turbo decoding. The proposed platform is based on a new configurable ASIP combined with an efficient memory a...
In this paper, we develop a method to analyze the probability of access failure in SRAM array (due to random Vt variation in transistors) by jointly considering variations in cell...
In this paper we report an automatic test pattern generator that can handle designs with one million gates or more on medium size workstations. Run times and success rates, i.e. t...
Sandip Kundu, Leendert M. Huisman, Indira Nair, Vi...