— Starting at the 65nm node, stress engineering to improve performance of transistors has been a major industry focus. An intrinsic stress source – shallow trench isolation –...
Andrew B. Kahng, Puneet Sharma, Rasit Onur Topalog...
The phase-change random access memory (PRAM) technology is fast maturing to production levels. Main advantages of PRAM are non-volatility, byte addressability, in-place programmab...
VLSI research, in its continuous push toward further miniaturisation, is seeking to break through the limitations of current circuit manufacture techniques by moving towards biomi...
James Smaldon, Natalio Krasnogor, Alexander Camero...
Statistical static timing analysis (SSTA) plays a key role in determining performance of the VLSI circuits implemented in state-of-the-art CMOS technology. A pre-requisite for emp...
Programmable routing and logic in field-programmable gate arrays are implemented using nMOS pass transistors. Since the threshold voltage drop across an nMOS device degrades the ...